作者: Jaeeun Yu , Chul-Ho Lee , Delphine Bouilly , Minyong Han , Philip Kim
DOI: 10.1021/ACS.NANOLETT.6B01152
关键词:
摘要: This study describes a new and simple approach to dope two-dimensional transition metal dichalcogenides (TMDCs) using the superatom Co6Se8(PEt3)6 as electron dopant. Semiconducting TMDCs are wired into field-effect transistor devices then immersed solution of these superatoms. The degree doping is determined by concentration superatoms in length time films dopant solution. Using this chemical approach, we able turn mono- few-layer MoS2 samples from moderately heavily electron-doped states. same applied on WSe2 changes their characteristics hole transporting transporting. Moreover, show that can be patterned specific areas TMDC films. To illustrate power technique, demonstrate fabrication lateral p–n junction selectively only portion channel device. Finally, encapsulation doped with cryst...