Crystallization and Fractal Formation in Annealed Al/a-Ge Bilayer Films
作者： Wu Feng , Zhang Shu-yuan , Chen Zhi-wen , Tan Shun
DOI: 10.1088/0256-307X/14/10/010
关键词:
摘要: The crystallization and fractal formation in annealed Al/a-Ge bilayer films were studied. It was found that the effect of metal-mediated increases with increasing annealing temperature time. However, patterns could be formed only samples proper thickness ratio. Some special phenomena at strain, broken, step areas are also reported.
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iphy.ac.cn参考文章(4)
Hou Jian-guo, Wu Zi-qin, Temperature dependence of fractal formation in ion-implanted a-Ge/Au bilayer thin films Physical Review B. ,vol. 40, pp. 1008- 1012 ,(1989) , 10.1103/PHYSREVB.40.1008
Crystallization and Fractal Formation in Annealed a-Ge/Au Bilayer Films Journal of Electron Microscopy. ,vol. 44, pp. 182- 190 ,(1995) , 10.1093/OXFORDJOURNALS.JMICRO.A051168
Zhang Ren-ji, Chu Sheng-lin, Wu Zi-qin, Crystallization of amorphous Ge in Ge/Au bilayer films and Ge-Au alloy films Chinese Physics Letters. ,vol. 2, pp. 221- 224 ,(1985) , 10.1088/0256-307X/2/5/008
Akira Sugawara, Takashi Kikukawa, Osamu Nittono, Growth dynamics of fractal Ge clusters during crystallization of amorphous phase on polycrystalline Au layer Materials Science and Engineering A-structural Materials Properties Microstructure and Processing. pp. 355- 360 ,(1994) , 10.1016/0921-5093(94)90226-7