Study of IR absorption and photoconductivity spectra of thermal double donors in silicon
作者： B. A. Andreev , V. V. Emtsev , D. I. Kryzhkov , D. I. Kuritsyn , V. B. Shmagin
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摘要: The IR absorption and photoconductivity spectra of a double donor (TDD) family with ionization energies less than 70 meV in silicon were investigated using Fourier transform spectroscopy resolution down to 0.25 cm -1 . values line frequencies, widths, splitting cross sections for transitions from the ground p-states (including high-excited states) obtained. Determination was made Hall data concerted changes boron TDDi concentrations caused by neutralization impurities under band gap illumination.
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