Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon
作者： Mara Bruzzi , David Menichelli , Monica Scaringella , Jaakko Härkönen , Esa Tuovinen
DOI: 10.1063/1.2192307
关键词: Thermal 、 Electrical resistivity and conductivity 、 Boron 、 Deep-level transient spectroscopy 、 Silicon 、 Materials science 、 Analytical chemistry 、 Space charge 、 Annealing (metallurgy) 、 Doping 、 General Physics and Astronomy
摘要: A quantitative study about the thermal activation of oxygen related donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation performed through isothermal annealing at 430°C up to a total time 120min. Space charge density after each step measured by transient current technique. The localized energy levels double (TD) have observed and studied details thermally stimulated currents (TSCs) range 10–70K, energies E effective cross sections σ determined for both emissions TD0∕+ (E=75±5meV, σ=4×10−14cm2) TD+∕+ (E=170±5meV, σ=2×10−12cm2). evolution space caused unambiguously TDs means deep level spectroscopy TSC, transients constant temperature i(t,T). Our results show that compensate initial boron doping, eventually pr...
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