作者: Mara Bruzzi , Hartmut F.-W. Sadrozinski , Abraham Seiden
DOI: 10.1016/J.NIMA.2007.05.326
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摘要: The need for ultra-radiation hard semiconductor detectors the inner tracker regions in high energy physics experiments of future generation can be satisfied either with materials which are inherently more radiation than float zone silicon or special detector structures improved resistance. This report compares directly data on performance rad-hard and devices proposed superLHC.