Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors
作者： J.M. Rafí , L. Cardona-Safont , M. Zabala , C. Boulord , F. Campabadal
DOI: 10.4028/WWW.SCIENTIFIC.NET/SSP.131-133.431
关键词:
摘要: In order to identify an appropriate low-temperature surface passivation that could be used for bulk lifetime estimation of high resistivity (HR) (> 1 k·cm) silicon radiation detectors, different passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic CZ float zone (FZ) substrates. Minority carrier measurements performed by means a μW-PCD set-up. The results show SiNx PECVD deposited at low temperatures (≤ 250°C) may evaluate the impact processing steps treatments substrate characteristics detectors. First are obtained about preliminary thermal treatment experiment stability layers, as well potential generation donors minority lifetime.
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