Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices

摘要: The current study presents the interface-state and electrical properties of silicon (Si)-based metal-oxide-semiconductor (MOS) devices using copper-doped titanium dioxide (Cu:TiO2) nanoparticles for possible applications as an interfacial layer in scaled high-k/metal gate MOSFET technology. structural Cu:TiO2 have been obtained by means X-ray diffraction (XRD), UV–Vis–NIR spectrometry, atomic force microscopy, scanning electron microscopy measurements; they were compared with pure TiO2 thin film. With incorporation Cu, rutile-dominated anatase/rutile multiphase crystalline was revealed XRD analysis. To understand nature this structure, electronic parameters controlling device performance calculated current–voltage (I–V), capacitance–voltage (C–V), conductance–voltage (G–V) measurements. ideality factor (n) 1.21 Al/Cu:TiO2/p-Si MOS device, while barrier height ϕb 0.75 eV semi-log I–V characteristics. This is good agreement 0.78 measured Norde model. Possible reasons deviation from unity addressed. From C–V measurements, values diffusion potential, height, carrier concentration extracted 0.67, 0.98 eV, 8.73 × 1013 cm−3, respectively. Our results encourage further work to develop process steps that would allow Cu-doped film/Si interface play a major role microelectronic applications.