Semiconductor on insulator vertical transistor fabrication and doping process

摘要: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional transistor in semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or deposition dopant-containing film which can then be heated drive dopants into transistor. Some embodiments employ both implantation dopant containing films, those is pure dopant, performed simultaneously.