Abrasive-free metal CMP in passivation domain

摘要: Metal CMP with reduced dishing and overpolish insensitivity is achieved an abrasive-free polishing composition having a pH oxidation-reduction potential in the domain of passivation metal and, therefore, low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments present invention comprise Cu film without any abrasive using comprising one or more chelating agents, oxidizers, corrosion inhibitors, agents to achieve about 3 10 deionized water.