Growth and structural characterization of epitaxial Cu/Nb multilayers
作者： A.S. Budiman , N. Li , Q. Wei , J.K. Baldwin , J. Xiong
DOI: 10.1016/J.TSF.2010.12.077
关键词:
摘要: Abstract Electron beam evaporation with optimized deposition parameters has been used to grow good quality epitaxial Cu/Nb nanoscale multilayered films on sapphire substrates. The of the films, as measured by intensities and widths X-ray diffraction peaks, increases increasing temperature. However, high temperatures also enhance tendency for layer pinch-off which eventually leads spheroidization growth multilayer polycrystalline islands. Deposition rates were produce highest continuous nanolayers, suitable in situ deformation experiments a synchrotron-based Laue micro-diffraction set up.
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