Zn 1−x Te x Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters
作者： Yunmo Koo , Hyunsang Hwang
DOI: 10.1038/S41598-018-30207-0
关键词:
摘要: We have experimentally demonstrated a strong correlation between the electrical properties of Zn1-xTex Ovonic threshold switching (OTS) selector device and material analysed by X-ray diffraction (XRD), spectroscopic ellipsometry, photoelectron spectroscopy (XPS). The key parameters determining performances were investigated. By comparing experimental data with calculation results from various analytical models previously developed for OTS materials, shown to be dependent on parameters; concentration sub-gap trap states bandgap energy material. This study also that those determined performance as expected model. origin phenomenon conduction mechanism explained both theoretically. leads better understanding devices, an insight process improvement optimize application.
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