Slurry for chemical-mechanical polishing
作者： Kenichi Aoyagi , Tetsuyuki Itakura , Shin Sakurai , Tomoko Wake , Yasuaki Tsuchiya
DOI:
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摘要: By using a polishing slurry which comprises, at least, grain, an oxidizing agent and higher-mono-primary amine, it is possible to suppress dishing erosion liable be produced in chemical mechanical (CMP) for copper-based metal film when forming buried interconnection of on barrier tantalum-based metal.
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