Characterization of polycrystalline diamond thin films grown on various substrates

摘要: Abstract Polycrystalline diamond thin films have been selectively grown on various substrates such as silicon, silicon nitride, dioxide, alumina, molybdenum, and boron nitride. This has achieved by damaging the substrate an ultrasonic agitation process using particles (typical size approximately 90 μm) in methanol. Microwave plasma-assisted chemical vapor deposition is used to grow a gas mixture of hydrogen methane. The were analyzed for morphology scanning electron microscopy, nature Raman spectroscopy, adhesion strength z -axis pull stud testing. Films nitride characterized X-ray diffraction.