Single package multi-chip rf power amplifier

摘要: Disclosed are a multi-chip power amplifier comprising plurality of chips (20-23) with each chip being transistor amplifier, and housing (36) in which all the semiconductor mounted. A input leads extend into output from housing. first matching networks (38) couple to an lead second (40) whereby has its own lead. By providing within single coupling leads, manufacturing cost is reduced overall package footprint on mounting substrate reduced. Further, close proximity reduces phase differences among signals chips.