Method for manufacturing VLSI MOS-transistor circuits
作者： Ernst-Guenter Mohr , Willy Beinvogl , Gerhard Enders
DOI:
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摘要: A method for manufacturing VLSI MOS-transistor circuits involving the production of transistors by means a spacer layer technique and ohmic contacts from gate interconnect to diffused regions substrate (thus providing buried contacts) both being simultaneously generated. Contact holes are provided at desired location in before deposition occurs across surface substrate. The is structured side walls gates interconnects which serve as connections. contact hole region doped same time source/drain areas ion implantation. combined manufacture using technology makes it possible MOS logic memory with voltage stable high packing density.
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