Glass formation and local arrangement of chalcogenide of Ga40Se60 and Ga33Se60Te7

摘要: Abstract The Ga40−xSe60Tex with x=0.0 and 7 alloys were prepared by quenching technique. glass transition, crystallization, melting temperature was determined differential scanning calorimetry (DSC). activation energy calculated for both transition crystallization (Et Ec). Thin films deposited a thermal evaporation technique thickness range (30–170) nm. amorphization could be confirmed X-ray diffraction electron microscope (SEM) the effect of composition thin on optical band gap values. mechanism absorption follows rule indirect allowed transition. (Eg) increases increasing thickness, but decreases adding Te in Ga40Se60. Optical constants measurement such as (refractive index n, K dispersion parameter) has been obtained (170 nm). real part imaginary dielectric constant are determined. dependence conductivity studied function 288–328 K. It is noticed that film increases. results treated frame chemical bond approach proposed Blcerano Ovshinsky [J. Non-Cryst. Solids 74 (1985)] average coordination number 〈Ncon〉.