Control of Junction Temperature and Its Rate of Change at Thermal Boundaries via Precise Loss Manipulation

摘要: To optimize the lifetime of switching power semiconductors, this paper presents a methodology to control device junction temperature T j and its change during cycles ΔT at thermal boundaries. This proposes supervisory state machine interrupt nominal system-level only when bounds are exceeded, coordinates smooth transitions as j (k) approach their respective ensure that states regulated via precise independent modulation conduction loss elements, decoupling methods proposed. Also proposed is law closes loop on rate Ṫ j , introduces active capacitance conductance into closed-loop system dynamics. Experimental evaluation illustrates well damped responses, gradual adjustment manipulated inputs frequency duty ratio. Finally, comparison with current limit-based regulation method how allows converters push harder against limits.