Growth Mode and Interface Structure of MBE Grown SiGe Structures
作者： E. Kasper , H.-J. Herzog , B. Dambkes , Th. Ricker
DOI: 10.1007/978-3-662-02470-6_6
关键词:
摘要: SiGe heterostructures and supperlattices were grown on Si substrates by molecular beam epitaxy (MBE). The observed growth mode interface structure exhibited strong deviations from equilibrium theory predictions. A concept of strain adjustment in Si/SiGe superlattices is proposed. first succesful realized n-channel SiGe-MODFET given as example device application this concept.
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