Strained layer SiSiGe superlattices
作者： E. Kasper , H.-J. Herzog , H. Jorke , G. Abstreiter
DOI: 10.1016/0749-6036(87)90047-4
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摘要: Abstract Si SiGe superlattices gained technical and scientific importance because of possible integration with conventional integrated circuits, strain induced properties, supercritical pseudomorphic growth, predicted indirect/direct band gap transitions. We report here mainly on adjustment in the superlattice influenced electronic ordering. This results type II ordering symmetrically strained superlattices, two-dimensional electron gas formation wide material silicon.
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