Tm3+-doped Gd3Ga5O12 crystal: A potential tunable laser crystal at 2.0μm
作者： Han Zhou , Xinghua Ma , Guitang Chen , Wancong Lv , Yan Wang
DOI: 10.1016/J.JALLCOM.2008.07.084
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摘要: Abstract A Tm 3+ -doped Gd 3 Ga 5 O 12 single crystal with a dimension of 25 mm × 20 mm was grown successfully by Czochralski method. The absorption spectrum recorded at room temperature and used to calculate the cross-section. Based on Judd–Ofelt (J–O) theory, we obtained three intensity parameters series spectral parameters, such as radiative probabilities, lifetimes branch ratios. Room fluorescence spectra luminescence decay curve were recorded. stimulated emission cross-section F 4 → H 6 IR transition calculated. maximum peak 2.0 μm is 1.05 × 10 −21 cm 2 . potential laser gain for this also investigated. This promising tunable infrared 2.0 μm.
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