Examining the crossing of I–V curves in devices based on mixed-ionic–electronic-conductors
作者： Dima Kalaev , Ilan Riess
DOI: 10.1016/J.SSI.2013.11.006
关键词:
摘要: Abstract Previously we have shown by simulations that I–V curve hysteresis and crossing can be obtained in devices based on mixed-ionic–electronic-conductors, with mobile donors conduction electrons (or acceptors holes), under an asymmetry the device or applied voltage. We here investigate role of signal frequency amplitude, ion mobility length curve. The results show is asymmetrical certain conditions only. This result may importance for design memristive non-stoichiometric materials ionic defects. does not occur at origin, I = 0 V = 0.
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