Range of Excited Electrons and Holes in Metals and Semiconductors
作者： Stanford University. Microwave Laboratory
DOI: 10.1143/JPSJ.19.486
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摘要: The relaxation frequency for electron-electron scattering of an electron having energy more than a few k B T above the Fermi level in metal is calculated Born approximation by assuming phenomenological Yukawa potential. same method then used to calculate hole below and semiconductor spherical bands. For electrons our result compared with obtained dielectric constant calculation.
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