2D Self–Consistent Modeling of Microcrystalline Silicon Deposition Process

摘要: A 2D self–consistent model of highly diluted silane in hydrogen discharges, typically used for the deposition of microcrystalline silicon thin films, was developed. The model was applied in a parallel plate, capacitively coupled plasma reactor at conditions of high pressures (1 to 10 Torr) and extremely high dilution of SiH4 in H2 (0.25% to 2.5%). The results of the model were compared to experimental measurements that were performed at identical conditions and a rather good agreement was found, especially concerning the electrical properties. The effect of the total gas pressure on the power distribution, the radical/ion fluxes and the charged and neutral species densities on the deposition rate are presented in an effort to reveal the basic features of working at high pressures.