引用次数
引用: 6,003
H-指数: 40
I10-指数 : 98
出版物: 235
Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency.
Meng-Lin Tsai , Ming-Yang Li , José Ramón Durán Retamal , Kai-Tak Lam
Advanced Materials 29 ( 32) 1701168 -1701168
115
2017
Bilayer graphene nanoribbon nanoelectromechanical system device: A computational study
Kai-Tak Lam , Chengkuo Lee , Gengchiau Liang
Applied Physics Letters 95 ( 14) 143107
59
2009
Stability and electronic structure of two dimensional Cx(BN)y compound
Kai-Tak Lam , Yunhao Lu , Yuan Ping Feng , Gengchiau Liang
Applied Physics Letters 98 ( 2) 022101
34
2011
Theoretical proposal for determining angular momentum compensation in ferrimagnets
Zhifeng Zhu , Xuanyao Fong , Gengchiau Liang
Physical Review B 97 ( 18) 184410
7
2018
Role of acoustic phonons in Bi 2 Se 3 topological insulator slabs: A quantum transport investigation
Gaurav Gupta , Hsin Lin , Arun Bansil , Mansoor Bin Abdul Jalil
Physical Review B 89 ( 24) 245419
11
2014
A computational evaluation of the designs of a novel nanoelectromechanical switch based on bilayer graphene nanoribbon
Kai-Tak Lam , Gengchiau Liang
international electron devices meeting 1 -4
8
2009
Performance comparison of III-V MOSFETs with source filter for electron energy
Kai-Tak Lam , Yee-Chia Yeo , Gengchiau Liang
international electron devices meeting
2
2012
Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?
Gaurav Gupta , Mansoor Bin Abdul Jalil , Gengchiau Liang
2013 IEEE International Electron Devices Meeting
1
2013
First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules
Xiao Gong , Yee-Chia Yeo , Sachin Yadav , Kian-Hua Tan
international electron devices meeting
9
2015
Effects of interlayer interaction in van der Waals layered black phosphorus for sub-10 nm FET
Kai-Tak Lam , Sheng Luo , Baokai Wang , Chuang-Han Hsu
international electron devices meeting
6
2015
Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules
Kian-Hui Goh , Kian-Hua Tan , Sachin Yadav , Annie
international electron devices meeting
7
2015
Avalanche photodiode featuring Germanium-tin multiple quantum wells on silicon: Extending photodetection to wavelengths of 2 and beyond
Yuan Dong , Wei Wang , Shuh Ying Lee , Dian Lei
international electron devices meeting
3
2015
A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration
Lingfei Wang , Yang Li , Xuewei Feng , Kah-Wee Ang
international electron devices meeting
7
2017
A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline-MoS 2 FET with Resistive Switching Behavior in Neuromorphic Computing
Lingfei Wang , Lin Wang , Kah-Wee Ang , Aaron Voon-Yew Thean
international electron devices meeting
2018
Klein tunneling in Weyl semimetals under the influence of magnetic field.
Can Yesilyurt , Seng Ghee Tan , Gengchiau Liang , Mansoor B. A. Jalil
Scientific Reports 6 ( 1) 38862
60
2016
Wave Function Parity Loss Used to Mitigate Thermal Broadening in Spin-orbit Coupled Zigzag Graphene Analogues
Mohammad Abdullah Sadi , Gengchiau Liang
Scientific Reports 7 ( 1) 40546
2017
Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures
Gengchiau Liang , Wen Huang , Chee Shin Koong , Jian-Sheng Wang
Journal of Applied Physics 107 ( 1) 014317
47
2010
Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film
Ying Wu , Sheng Luo , Wei Wang , Saeid Masudy-Panah
Journal of Applied Physics 122 ( 22) 224503
13
2017
Time-dependent quantum transport and power-law decay of the transient current in a nano-relay and nano-oscillator
Eduardo C. Cuansing , Gengchiau Liang
Journal of Applied Physics 110 ( 8) 083704
15
2011
High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
Gengchiau Liang , S. Bala Kumar , M. B. A. Jalil , S. G. Tan
Applied Physics Letters 99 ( 8) 083107
14
2011