引用次数
引用: 32,372
H-指数: 65
I10-指数 : 156
出版物: 376
Shubnikov-de Haas Oscillations in bilayer MoSe 2: effective mass and carrier density dependent quantum Hall states sequence
Stefano Larentis , Hema Movva , Babak Fallahazad , Kyounghwan Kim
APS March Meeting Abstracts 2018 S35. 002 -S35. 002
2018
Resonant Interlayer Tunneling in 2D Van Der Waals-Materials-Based Channel-Dielectric-Channel Systems and Possible Device and Circuit Applications
Leonard F Register , G William Burg , Chris M Corbet , Babak Fallahazad
Electrochemical Society Meeting Abstracts 232 ( 14) 838 -838
2017
Scanning Tunneling Microscopy and Spectroscopy of Twisted Bilayer Graphene with Small Twist Angles
Shengqiang Huang , Kyounghwan Kim , Ashley DaSilva , Takashi Taniguchi
APS March Meeting Abstracts 2017 L32. 007 -L32. 007
2017
Carrier Density Dependent Quantum Hall States Sequence of Holes in WSe 2
Hema CP Movva , Babak Fallahazad , Kyounghwan Kim , Stefano Larentis
APS March Meeting Abstracts 2017 F31. 003 -F31. 003
2017
Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe 2: spin-valley locking, effective mass, and inter-layer coupling
Babak Fallahazad , Hema Chandra Prakash Movva , Kyounghwan Kim , Stefano Larentis
APS March Meeting Abstracts 2016 R16. 004 -R16. 004
2016
Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad , Kayoung Lee , Sangwoo Kang , Jiamin Xue
APS March Meeting Abstracts 2015 S16. 002 -S16. 002
2015
Mapping the chemical potential in bilayer graphene using double bilayer heterostructures
Kayoung Lee , Babak Fallahazad , Jiamin Xue , Takashi Taniguchi
APS March Meeting Abstracts 2014 D29. 007 -D29. 007
2014
Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure
Junho Choi , Jacob Embley , Daria D Blach , Raül Perea-Causín
Nano Letters 23 ( 10) 4399 -4405
6
2023
Bi-layer pseudo-spin field-effect transistor
Sanjay K Banerjee , II Leonard Franklin Register , Allan MacDonald , Dharmendar Reddy Palle
32
2012
Transistor that employs collective magnetic effects thereby providing improved energy efficiency
Allan MacDonald , II Leonard Franklin Register , Emanuel Tutuc , Inti Sodemann
13
2017
Negative Compressibility and Charge Partitioning Between Graphene and MoS 2 Two-Dimensional Electron Gases
John Tolsma , Stefano Larentis , Emanuel Tutuc , Allan MacDonald
APS March Meeting Abstracts 2014 W51. 004 -W51. 004
2014
Carrier distribution and negative compressibility in graphene-MoS 2 heterostructures
Stefano Larentis , John R Tolsma , Babak Fallahazad , David C Dillen
APS March Meeting Abstracts 2014 W51. 003 -W51. 003
2014
Bilayer pseudoSpin Field Effect Transistor (BiSFET): logic and memory elements
Leonard F Register , Dharmendar Reddy , Emanuel Tutuc , Allan H MacDonald
Flat bands in long moiré wavelength twisted bilayer WSe2
Zhiming Zhang , Yimeng Wang , Kenji Watanabe , Takashi Taniguchi
2019
Colossal Coulomb Drag in Double Bilayer Graphene Heterostructures
Kayoung Lee , Jaimin Xue , Takashi Taniguchi , Kenji Watanabe
APS March Meeting Abstracts 2015 S16. 007 -S16. 007
2015
Transport gap in dual-gated graphene bilayers using oxides as dielectrics
Kayoung Lee , Babak Fallahazad , Hongki Min , Emanuel Tutuc
IEEE transactions on electron devices 60 ( 1) 103 -108
17
2012
Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $\nu= 0$ in High Magnetic Fields
Seyoung Kim , Kayoung Lee , Emanuel Tutuc
arXiv preprint arXiv:1102.0265
90
2011
$\hbox {Ge-Si} _ {x}\hbox {Ge} _ {1-x} $ Core–Shell Nanowire Tunneling Field-Effect Transistors
Junghyo Nah , En-Shao Liu , Kamran M Varahramyan , Emanuel Tutuc
IEEE transactions on electron devices 57 ( 8) 1883 -1888
48
2010
Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene
Luigi Colombo , Sanjay Banerjee , Seyoung Kim , Emanuel Tutuc
30
2012
Scaling Properties of $\hbox {Ge} $–$\hbox {Si} _ {x}\hbox {Ge} _ {1-x} $ Core–Shell Nanowire Field-Effect Transistors
Junghyo Nah , En-Shao Liu , Kamran M Varahramyan , Davood Shahrjerdi
IEEE transactions on electron devices 57 ( 2) 491 -495
21
2009