George Kokkoris
机构: School of Chemical Engineering, National Technical University of Athens
每年引用次数
引用次数
引用: 2,390
H-指数: 29
I10-指数 : 55
出版物: 115
Fast computations in atmospheric pressure plasma jets
Dimitrios Passaras , Eleftherios Amanatides , George Kokkoris
APS Annual Gaseous Electronics Meeting Abstracts LT2. 015 -LT2. 015
2020
Fast 2D computations in the COST reference jet with an 1D plasma model
Sotiris Mouchtouris , George Kokkoris
APS Annual Gaseous Electronics Meeting Abstracts LT2. 020 -LT2. 020
2020
Modeling of inductively coupled plasmas at low pressure conditions
Sotiris Mouchtouris , George Kokkoris
APS Annual Gaseous Electronics Meeting Abstracts SR2. 003 -SR2. 003
2016
Si etching in high-density SF 6 plasmas for microfabrication: surface roughness formation
A. Tserepi , E. Gogolides , G. Kokkoris , O. Brani
Microelectronic Engineering 73 ( 1) 312 -318
18
2004
Computational investigation of actuation mechanisms of droplets on porous air-permeable substrates.
P. Chrysinas , G. Pashos , N. Vourdas , G. Kokkoris
Soft Matter 14 ( 29) 6090 -6101
2
2018
Lab-on-Chip platform and protocol for rapid foodborne pathogen detection comprising on-chip cell capture, lysis, DNA amplification and surface-acoustic-wave detection
K. Tsougeni , G. Kaprou , C.M. Loukas , G. Papadakis
Sensors and Actuators B: Chemical 320 128345
37
2020
Wetting transitions on patterned surfaces with diffuse interaction potentials embedded in a Young-Laplace formulation.
G. Pashos , G. Kokkoris , A. G. Papathanasiou , A. G. Boudouvis
Journal of Chemical Physics 144 ( 3) 034105 -034105
15
2016
Droplet Mobility Manipulation on Porous Media Using Backpressure.
N. Vourdas , G. Pashos , G. Kokkoris , A. G. Boudouvis
Langmuir 32 ( 21) 5250 -5258
15
2016
Nanoscale Roughness Effects at the Interface of Lithography and Plasma Etching: Modeling of Line-Edge-Roughness Transfer During Plasma Etching
G. Kokkoris , V. Constantoudis , E. Gogolides
IEEE Transactions on Plasma Science 37 ( 9) 1705 -1714
14
2009
SiO2 and Si etching in fluorocarbon plasmas: Coupling of a surface model with a profile evolution simulator
G. Kokkoris , E. Gogolides , A.G. Boudouvis
Microelectronic Engineering 53 395 -398
5
2000
Simulation of fluorocarbon plasma etching of SiO2 structures
G. Kokkoris , E. Gogolides , A.G. Boudouvis
Microelectronic Engineering 57-58 599 -605
1
2001
Dual nanoscale roughness on plasma-etched Si surfaces: Role of etch inhibitors
G. Kokkoris , V. Constantoudis , P. Angelikopoulos , G. Boulousis
Physical Review B 76 ( 19) 193405
69
2007
Towards control of plasma-induced surface roughness: simultaneous to plasma etching deposition
G. Kokkoris
European Physical Journal-applied Physics 56 ( 2) 24012
9
2011
A modified phase-field method for the investigation of wetting transitions of droplets on patterned surfaces
G. Pashos , G. Kokkoris , A.G. Boudouvis
Journal of Computational Physics 283 258 -270
19
2015
Beware of symmetry breaking and periodic flow regimes in axisymmetric CVD reactor setups
N. Cheimarios , M. Kavousanakis , G. Kokkoris , A.G. Boudouvis
Computers & Chemical Engineering 124 124 -132
1
2019
Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution
G. Kokkoris , A. Tserepi , A. G. Boudouvis , E. Gogolides
Journal of Vacuum Science and Technology 22 ( 4) 1896 -1902
54
2004
Plasma Nanotextured Polymeric Surfaces for Controlling Cell Attachment and Proliferation: A Short Review
A. Tserepi , E. Gogolides , A. Bourkoula , A. Kanioura
Plasma Chemistry and Plasma Processing 36 ( 1) 107 -120
37
2016
Optimization of Patterned Surfaces for Improved Superhydrophobicity through Cost-Effective Large-Scale Computations.
V. Krokos , G. Pashos , A. N. Spyropoulos , G. Kokkoris
Langmuir 35 ( 20) 6793 -6802
3
2019
Miniaturized devices for isothermal DNA amplification addressing DNA diagnostics
G. D. Kaprou , G. Papadakis , D. P. Papageorgiou , G. Kokkoris
Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems 22 ( 7) 1529 -1534
15
2016
Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness
D. Drygiannakis , M. D. Nijkerk , G. P. Patsis , G. Kokkoris
Advances in Resist Materials and Processing Technology XXIV 6519
4
2007