Toward understanding the wide distribution of time scales in negative bias temperature instability

Ben Kaczer , Tibor Grasser , Raul Fernandez , Guido Groeseneken
ECS Transactions 6 ( 3) 265 -265

13
2007
Influence of gate oxide reliability on FinFET characteristics

Raul Fernandez , Ben Kaczer , Rosana Rodriguez , Montserat Nafria
2nd Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits-EUROSOI, Location: Barcelona Spain

1
2006
A new approach to modelling the impact of EMI on MOSFET DC behavior

S BenDhia , A Boyer , R Fernandez-Garcia , I Gil

2011
Experimental investigations on electrical stress impact on integrated circuit electromagnetic emission

A Boyer , S Ben Dhia , B Li , N Berbel
IEEE Trans. on EMC, vol. PP ( 99)

6
2013
OT6. 236-A Textile Electrochemical Sensor based on Ag Coated Fibers

M Martínez-Estrada , I Gil , R Fernández-García
Lectures 191 -192

2024
An alternative method to quantify the electromagnetic immunitybasedontheWeibull distribution

R Fernández-García , I Gil
IEICE Electronics Express 10 ( 5) 1 -5

Breakdown Spot Electrical Properties at the nanoscale and their impact on the Post-Breakdown Performance of MOS Devices

M Porti , R Fernández , R Rodríguez , M Nafría
Nanophysics, Nanoclusters And Nanodevices 125 -125

2006
DC broken down MOSFET model for circuit reliability simulation

R. Fernández , R. Rodríguez , M. Nafría , X. Aymerich
Electronics Letters 41 ( 6) 368 -370

9
2005
Ring oscillator behavior after oxide breakdown

R Fernandez , R Rodriguez , M Nafria , X Aymerich
VLSI Circuits and Systems II 5837 374 -379

2005
Acknowledgement to Reviewers of Inventions in 2018

Inventions Editorial Office ,
Inventions 4 ( 1) 5 -5

2019