引用次数
引用: 723
H-指数: 12
I10-指数 : 17
出版物: 41
High-performance back-illuminated Ge0.92Sn0.08/Ge multiple-quantum-well photodetector on Si platform for SWIR Detection
Chuan Seng Tan , Qimiao Chen , Xiao Gong , Yi-Chiau Huang
IEEE Journal of Selected Topics in Quantum Electronics 1 -1
11
2021
Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform
Xiao Gong , Yi-Chiau Huang , Dian Lei , Saeid Masudy-Panah
international conference on group iv photonics
2019
Ge 0.9 Sn 0.1 p-i-n Photodiode with Record-High Responsivity at Two-Micron-Wavelength
Shengqiang Xu , Yi-Chiau Huang , Wei Wang , Yuan Dong
international conference on group iv photonics
2018
Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10 −10 Ω-cm 2
Ying Wu , Wei Wang , Saeid Masudy-Panah , Yang Li
symposium on vlsi technology
6
2018
GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest G m,int of 900 µS/µm, and High-Field µ eff of 275 cm 2 /V•s
Dian Lei , Kaizhen Han , Kwang Hong Lee , Yi-Chiau Huang
symposium on vlsi technology
2018
The First GeSn Gate-All-Around Nanowire P-FET on the GeSnOI Substrate with Channel Length of 20 nm and Subthreshold Swing of 74 mV/decade
Yuye Kang , Kaizhen Han , Eugene Y.-J. Kong , Dian Lei
symposium on vlsi technology
2
2019
The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs
Dian Lei , Kwang Hong Lee , Shuyu Bao , Wei Wang
symposium on vlsi technology
13
2017
First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems
Kaizhen Han , Ying Wu , Yi Chiau Huang , Shengqiang Xu
symposium on vlsi technology
2
2019
High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band
Shengqiang Xu , Kaizhen Han , Yi-Chiau Huang , Yuye Kang
symposium on vlsi technology
2019
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.
Yuan Dong , Wei Wang , Shengqiang Xu , Dian Lei
Optics Express 25 ( 14) 15818 -15827
80
2017
Ge 0.9 Sn 0.1 multiple-quantum-well p-i-n photodiodes for optical communications at 2 μm
Yuan Dong , Wei Wang , Shengqiang Xu , Dian Lei
optical fiber communication conference 1 -3
2017
Pseudomorphic GeSn/Ge Multiple-quantum-well on Silicon for Photo Detection and Modulation at 2 µm Wavelength Range
Shengqiang Xu , Wei Wang , Yuan Dong , Yi-Chiau Huang
Optical Fiber Communication Conference (OFC) 2019 1 -3
2019
High Speed ( $\boldsymbol{f}_{3-\boldsymbol{d}\boldsymbol{B}}$ above 10 GHz) Photo Detection at Two-micron-wavelength Realized by GeSn/Ge Multiple-quantum-well Photodiode on a 300 mm Si Substrate
Shengqiang Xu , Wei Wang , Yi-Chiau Huang , Yuan Dong
international electron devices meeting
1
2018
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform.
Wei Wang , Dian Lei , Yi-Chiau Huang , Kwang Hong Lee
Optics Express 26 ( 8) 10305 -10314
10
2018
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.
Shengqiang Xu , Wei Wang , Yi-Chiau Huang , Yuan Dong
Optics Express 27 ( 4) 5798 -5813
77
2019
GeSn lateral p-i-n photodetector on insulating substrate
Shengqiang Xu , Yi-Chiau Huang , Kwang Hong Lee , Wei Wang
Optics Express 26 ( 13) 17312 -17321
12
2018
Si-on-insulator grating coupler operating at 2 μιη: Device design, fabrication, and characterization
Shengqiang Xu , Xin Guo , Yuan Dong , Wei Wang
ieee silicon nanoelectronics workshop 103 -104
2017
Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal
Dian Lei , Kwang Hong Lee , Yi-Chiau Huang , Shuyu Bao
ieee electron devices technology and manufacturing conference
2018
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate
Hao Zhou , Shengqiang Xu , Shaoteng Wu , Yi-Chiau Huang
Optics Express 28 ( 23) 34772 -34786
2
2020
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm.
Hao Zhou , Shengqiang Xu , Yiding Lin , Yi-Chiau Huang
Optics Express 28 ( 7) 10280 -10293
14
2020