High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform.
作者： Wei Wang , Dian Lei , Yi-Chiau Huang , Kwang Hong Lee , Wan-Khai Loke
DOI: 10.1364/OE.26.010305
关键词: Integrated circuit 、 Transistor 、 Photodetector 、 Frequency response 、 Optoelectronics 、 Optics 、 Night vision 、 Insulator (electricity) 、 CMOS 、 Materials science 、 Dark current
摘要: We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and p-type fin field-effect transistor (pFinFET) on an advanced GeSn-on-insulator (GeSnOI) platform by complementary metal-oxide-semiconductor (CMOS) compatible processes. The detection range is extended beyond 2 µm, with responsivities 0.39 0.10 A/W at 1550 nm 2003 nm, respectively. Through insertion ultrathin Al2O3 Schottky-barrier-enhancement layer, dark current IDark suppressed more than orders magnitude. An impressive ~65 nA was achieved operating voltage 1.0 V. A frequency response measurement reveals achievement a 3-dB bandwidth ~1.4 GHz illumination wavelength µm. pFinFET width (Wfin) scaled down to 15 also fabricated GeSnOI platform, exhibiting small subthreshold swing (S) 93 mV/decade, high drive 176 µA/µm, good control short channel effects (SCEs). This work paves way for realizing compact, low-cost, multi-functional opto-electronic integrated circuits.
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