Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm
作者： Chuan Seng Tan , Chuan Seng Tan , Qimiao Chen , Simon Chun Kiat Goh , Lin Zhang
DOI: 10.1016/J.JALLCOM.2021.159696
关键词: Annealing (metallurgy) 、 Thermal stability 、 Raman spectroscopy 、 Materials science 、 Crystal 、 Photodetector 、 Thin film 、 Optoelectronics 、 Dark current 、 Precipitation (chemistry)
摘要: Abstract Here, we explore the thermal stability of GeSn epilayers with varying Sn contents (3–10%) at an annealing temperature ranging from 300° to 750°C. It is found that ordered nanopatterns are formed on surface content 8% without excessive precipitation after 700 °C. Despite being annealed high temperatures, maintains its crystal structure, which confirmed by X-ray Diffraction (XRD), Raman spectrum, and secondary-ion mass spectrometry (SIMS). The corresponding photocurrents photodetectors wavelength 2 µm also indicate quality alloys does not deteriorate significantly high-temperature (675–700 °C). Meanwhile, decrease dark current enhancement Ip/Id ratio (on-off ratio) indicates improvement detectivity photodetector due process. Furthermore, optimized 550 °C achieve 200% operated 2 µm.
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