Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors
作者： Liming Wang , Yichi Zhang , Yifei Wu , Tao Liu , Yuanhao Miao
关键词: Annealing (metallurgy) 、 Photodetector 、 Responsivity 、 Alloy 、 Dark current 、 Molecular beam epitaxy 、 Wafer 、 Nanoparticle 、 Optoelectronics 、 Materials science
摘要: Ge $_{{1}-{x}}$ Sn x alloy films with contents of 3% and 10% were grown on Si wafers by low-temperature nonequilibrium molecular beam epitaxy. The thermostabilities the GeSn photodetectors containing them studied. No segregation was observed in Ge0.97Sn0.03 annealed below 750 °C. Conversely, occurred nanoparticles formed within Ge0.90Sn0.10 above 400 Upon increasing annealing temperature to °C, particles thermally driven segregated surface both films. Photodetectors fabricated based as-grown Because decreased defect content film after annealing, dark current obviously responsivity devices increased. These results are fundamentally important for applications high-performance lasers alloys.
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