Stacked vertically isolated MOSFET structure and method of forming the same
作者： Liu Chee Wee , Huang Yu-Shiang , Huang Wen Hung , Yeh Hung-Yu
DOI:
关键词: Optoelectronics 、 MOSFET 、 Buffer (optical fiber) 、 Gate stack 、 Communication channel 、 Substrate (electronics) 、 Etching (microfabrication) 、 Layer (electronics) 、 Materials science
摘要: A MOSFET structure including stacked vertically isolated MOSFETs and a method for forming the same are disclosed. In an embodiment, may include depositing first buffer layer over substrate; channel layer; second third etching layer, to form fin structure; plurality of openings; gate stack in opening disposed replacing portion with isolation structure.
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