Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method

摘要: In a method of forming structure with field effect transistors (FETs) having different drive currents, stack is formed on substrate. The substrate first semiconductor material and the includes alternating layers second material. Recess(es) filled sacrificial are in certain area(s) stack. patterned into fins gate-all-around (GAA) FET processing performed. GAAFET removing gates to form gate openings for GAAFETs any (if present) from such that, within each opening, nanoshape(s) that extend laterally between source/drain regions remain. Gate where was removed will have fewer nanoshapes than other openings. Thus, structure, some channel and, thereby lower currents others.