Measurement of the temperature dependence of the I/SUB C/(V/SUB be/) characteristics of integrated bipolar transistors
作者： G.C.M. Meijer , K. Vingerling
DOI: 10.1109/JSSC.1980.1051368
关键词: Photonic crystal 、 Optoelectronics 、 Temperature measurement 、 Common emitter 、 Voltage 、 Heterostructure-emitter bipolar transistor 、 Atomic physics 、 Bipolar junction transistor 、 Materials science 、 Bandgap voltage reference
摘要: The temperature dependence of the I/SUB C/(V/SUB be/) relationship bipolar transistors can be characterized by two parameters /spl eta/ and V/SUB go/. authors discuss a new method for determination these parameters. With this there is no need accurate measurements. It shown that results fit very well with bandgap-reference characteristics. An analytical calculation g0/ from values base emitter voltage or bandgap reference at different temperatures presented.
harvard.edu
sci-hub.se 参考文章(5)
Akira Ohte, Michiaki Yamagata, A Precision Silicon Transistor Thermometer IEEE Transactions on Instrumentation and Measurement. ,vol. 26, pp. 335- 341 ,(1977) , 10.1109/TIM.1977.4314571
H. K. Gummel, H. C. Poon, An Integral Charge Control Model of Bipolar Transistors Bell System Technical Journal. ,vol. 49, pp. 827- 852 ,(1970) , 10.1002/J.1538-7305.1970.TB01803.X
J.W. Slotboom, H.C. de Graaff, Measurements of bandgap narrowing in Si bipolar transistors Solid-state Electronics. ,vol. 19, pp. 857- 862 ,(1976) , 10.1016/0038-1101(76)90043-5
K.E. Kuijk, A precision reference voltage source IEEE Journal of Solid-state Circuits. ,vol. 8, pp. 222- 226 ,(1973) , 10.1109/JSSC.1973.1050378
Gerard C. M. Meijer, A New Configuration for Temperature Transducers and Bandgap References european solid state circuits conference. pp. 142- 145 ,(1978)