Modeling and Model Reduction for Control and Optimization of Epitaxial Growth in a Commercial Rapid Thermal Chemical Vapor Deposition Reactor

摘要: Abstract : In December 1996, a project was initiated at the Institute for Systems Research (ISR), under an agreement between Northrop Grumman Electronic Sensors and Division (ESSD) ISR, to investigate epitaxial growth of silicon{germanium (Si{Ge) heterostructures in commercial rapid thermal chemical vapor deposition (RTCVD) reactor. This report provides detailed account objectives results work done on this as September 1997. The covers two main topics - modeling model reduction. Physics{based models are developed thermal, fluid, mechanisms involved growth. Experimental validation determination parameters is described. Due complexity high computational demands models, we use reduction techniques reduce complexity, leading faster simulation facilitating standard control optimization strategies.