High performance and the low voltage operating InGaZnO thin film transistor
作者： Dae-ho Son , Dae-Hwan Kim , Shi-Joon Sung , Eun-Ae Jung , Jin-Kyu Kang
DOI: 10.1016/J.CAP.2010.03.012
关键词: Transistor 、 Threshold voltage 、 Optoelectronics 、 Thin-film transistor 、 Hafnium oxide 、 Low voltage 、 Materials science 、 Sputtering 、 Gate dielectric 、 General Physics and Astronomy 、 General Materials Science
摘要: … In this study, we compare the electrical properties of inverted-coplanar-type InGaZnO thin-film … The HfO 2 /InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 …
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