The relationship between processing parameters and the performance of novel amorphous silicon–indium–zinc oxide thin film transistors
作者： Eugene Chong , Seung Han Kim , Eun Ah Cho , Gun-Eik Jang , Sang Yeol Lee
DOI: 10.1016/J.CAP.2011.03.079
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摘要: Abstract The processing parameter dependence of the performance amorphous silicon-indium-zinc-oxide (a-SIZO) films was systematically investigated for Thin Film Transistors (TFTs). SIZO thin were prepared on a SiO 2 / p -Si substrate using 2 wt% Si-doped IZO (2SIZO) ceramic target through an RF-magnetron sputtering process with various parameters, such as RF power and oxygen partial pressure. composition analysis measured by Induced-Coupled Plasma (ICP) X-Ray fluorescence (XRF). electrical 2SIZO relatively changed parameters. 2SIZO-TFTs confirmed that μ FE decreaseswith increasing pressure decreasing RF-power.
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