Properties of radio-frequency magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing

摘要: Abstract Indium tin oxide (ITO) films have been prepared by radio-frequency (r.f.) magnetron sputtering an target (90 wt.% In2O3−10 SnO2) onto glass substrates without in-situ substrate heating. The effect of conditions on the deposition rate and optical electrical properties ITO are investigated. as-deposited resistivity ∼4 × 10−4Ω cm, visible transmittance about 85%, infrared reflectance above 80% at 5 μm. A virtual source sputtered particles is formed in gap between its position related to energy particles. used explain correlation target-to-substrate distance. O/In atomic ratio found decrease with increasing power, resulting increase carrier concentration film a Hall mobility. Blackening deposited high power observed discussed.