Effect of aluminum addition to solution-derived amorphous indium zinc oxide thin film for an oxide thin film transistors
作者： Sung Min Park , Dong Hee Lee , You Sung Lim , Dae Kuk Kim , Moonsuk Yi
DOI: 10.1016/J.MEE.2013.03.121
关键词: Zinc 、 Thin film 、 Oxide thin-film transistor 、 Oxide 、 Threshold voltage 、 Annealing (metallurgy) 、 Thin-film transistor 、 Optoelectronics 、 Amorphous solid 、 Materials science
摘要: Graphical abstractDisplay Omitted HighlightsWe fabricated aluminum-added IZO thin film as a channel layer in TFTs.Surface morphology of films tends to be smooth Al addition increases.As contents increased, off current dropped, Vth moved positive direction.The might suppress carrier concentration TFTs. Aluminum-doped indium zinc oxide (IZO) transistors (TFTs) were examine the effect aluminum incorporation solution-derived The containing was amorphous. suppressed and affected electrical characteristics bottom-gate TFTs manufactured on highly doped n-type silicon wafers coated with SiO2 gate insulator. An aluminum-doped solution spin annealed air. molar ratio aluminum-versus-indium-versus changed determine optimized depending annealing temperature thickness. exhibited high on/off ~3.0i?106, threshold voltage ~2V low subthreshold swing 0.76V/dec, respectively.
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