In2O3 nanowires as chemical sensors
作者： Chao Li , Daihua Zhang , Xiaolei Liu , Song Han , Tao Tang
DOI: 10.1063/1.1559438
关键词:
摘要: We present an approach to use individual In2O3 nanowire transistors as chemical sensors working at room temperature. Upon exposure a small amount of NO2 or NH3, the showed decrease in conductance up six five orders magnitude and also substantial shifts threshold gate voltage. These devices exhibited significantly improved sensing performance compared existing solid-state many aspects, such sensitivity, selectivity, response time, lowest detectable concentrations. Furthermore, recovery time our can be shortened just 30 s by illuminating with UV light vacuum.
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