作者: B. Lei , C. Li , D. Zhang , T. Tang , C. Zhou
DOI: 10.1007/S00339-004-2707-X
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摘要: We present two effective routes to tune the electronic properties of single-crystalline In2O3 nanowires by controlling doping. The first method involves using different O2 concentrations during synthesis. Lightly (heavily) doped were produced high (low) concentrations, respectively, as revealed conductances and threshold voltages nanowire-based field-effect transistors. Our second exploits post-synthesis baking, baking heavily in ambient air led suppressed conduction a positive shift voltage, whereas lightly vacuum displayed opposite behavior. approaches offer viable ways many nonstoichiometric metal oxide systems such In2O3, SnO2, ZnO for various applications.