Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy
作者： Preston T. Webster , Arvind J. Shalindar , Stephen T. Schaefer , Shane R. Johnson
DOI: 10.1063/1.4994847
关键词: Surface reconstruction 、 Analytical chemistry 、 Single crystal 、 Ellipsometry 、 Rutherford backscattering spectrometry 、 Molecular beam epitaxy 、 Electron diffraction 、 Mole fraction 、 Diffraction 、 Materials science
摘要: The structural and optical properties of pseudomorphic InAsSbBi grown on GaSb are examined using reflection high-energy electron diffraction, X-ray Rutherford backscattering spectrometry, spectroscopic ellipsometry. layer studied is 210 nm thick was by molecular beam epitaxy at 280 °C under a (2 × 3) surface reconstruction near-stoichiometric fluxes. material homogeneous single crystal with no observable defects or Bi droplets. group-V mole fractions determined measurements the fraction diffraction lattice tetragonal distortion. bandgap energy from room temperature constants measured These InAsSb InAsBi utilized to describe as function bowing model.
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