作者: Jeon-Kook Lee , Dongkyun Park , Deok-Soo Cheong , Jong-Wan Park , Chul Soon Park
DOI: 10.1116/1.582402
关键词: Ceramic 、 Substrate (electronics) 、 Materials science 、 Sputter deposition 、 Residual stress 、 Deposition (phase transition) 、 Sputtering 、 Composite material 、 Thin film 、 Perovskite (structure)
摘要: Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) films were deposited by the radio-frequency magnetron sputtering technique with Pb- and Mg-enriched ceramic targets. The perovskite structural growth was carried out over a wide range of processing parameters. PMN–PT targets synthesized columbite technique. Surface cracking due to residual stress induced low-temperature deposition. To reduce surface-layer delamination, substrate temperature during deposition increased 500 °C. Even though amount phase decreased, surface morphology free macrodelaminations better than case room-temperature By releasing, high-temperature reduces delaminations thin on Pt/Ti/SiO2/Si substrate. controlling sputtered-particle kinetic energy film composition, morphologies changed be smooth delamination-free.