Hydrogen induced positive charge generation in gate oxides
作者： JF Zhang , CZ Zhao , Guido Groeseneken , Robin Degraeve , JN Ellis
DOI: 10.1063/1.1384860
关键词: Oxide 、 Electron mobility 、 Irradiation 、 Gate oxide 、 Chemical physics 、 Hydrogen 、 Thermal stability 、 Boron 、 Annealing (metallurgy)
摘要: This article investigates the H2-anneal induced positive charge generation in gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary process. A significant number (∼1012 cm−2) fixed and mobile charges are generated at 450 °C. Properties (reactivity, electrical thermal stability) these compared with observed buried silicon-on-insulator devices. The differences two investigated, terms their transportation time across oxide, uniformity sources hydrogen. Attention is paid to role played boron possible connection between species here defects responsible for bias temperature instability. Efforts made explain difference reactivity hydrogenous released irradiation or electrica...
core.ac.uk
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(37)
N.S. Saks, C.M. Dozier, D.B. Brown, Time dependence of interface trap formation in MOSFETs following pulsed irradiation IEEE Transactions on Nuclear Science. ,vol. 35, pp. 1168- 1177 ,(1988) , 10.1109/23.25435
V. V. Afanas’ev, A. Stesmans, Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing Applied Physics Letters. ,vol. 72, pp. 79- 81 ,(1998) , 10.1063/1.120650
D.M. Fleetwood, M.J. Johnson, T.L. Meisenheimer, P.S. Winokur, W.L. Warren, S.C. Witczak, 1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices IEEE Transactions on Nuclear Science. ,vol. 44, pp. 1810- 1817 ,(1997) , 10.1109/23.658947
J.F. Zhang, W. Eccleston, Positive bias temperature instability in MOSFETs IEEE Transactions on Electron Devices. ,vol. 45, pp. 116- 124 ,(1998) , 10.1109/16.658821
K. Vanheusden, R.A.B. Devine, J.R. Schwank, D.M. Fleetwood, R.G. Polcawich, W.L. Warren, S.P. Karna, R.D. Pugh, Irradiation response of mobile protons in buried SiO/sub 2/ films IEEE Transactions on Nuclear Science. ,vol. 44, pp. 2087- 2094 ,(1997) , 10.1109/23.659021
K. Vanheusden, P.P. Korambath, H.A. Kurtz, S.P. Karna, D.M. Fleetwood, W.M. Shedd, R.D. Pugh, The effect of near-interface network strain on proton trapping in SiO/sub 2/ IEEE Transactions on Nuclear Science. ,vol. 46, pp. 1562- 1567 ,(1999) , 10.1109/23.819121
H. Ushizaka, Y. Sato, The process dependence on positive bias temperature aging instability of p/sup +/(B) polysilicon-gate MOS devices IEEE Transactions on Electron Devices. ,vol. 40, pp. 932- 937 ,(1993) , 10.1109/16.210201
L. Do Thanh, P. Balk, Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen Annealing Journal of The Electrochemical Society. ,vol. 135, pp. 1797- 1801 ,(1988) , 10.1149/1.2096133
R.E. Stahlbush, R.K. Lawrence, H.L. Hughes, H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation models IEEE Transactions on Nuclear Science. ,vol. 45, pp. 2398- 2407 ,(1998) , 10.1109/23.736460
J.F. Zhang, H.K. Sii, G. Groesendeken, R. Degraeve, Degradation of oxides and oxynitrides under hot hole stress IEEE Transactions on Electron Devices. ,vol. 47, pp. 378- 386 ,(2000) , 10.1109/16.822284