The effect of near-interface network strain on proton trapping in SiO/sub 2/
作者： K. Vanheusden , P.P. Korambath , H.A. Kurtz , S.P. Karna , D.M. Fleetwood
DOI: 10.1109/23.819121
关键词:
摘要: The buildup of positive charge during annealing in forming gas at 600/spl deg/C was compared for various types Si/SiO/sub 2/ interfaces. Our data suggest a correlation between the presence stressed bonds SiO/sub network near interface, and ratio fixed vs. mobile (protons) detected interface after performing forming-gas annealing. We further propose that these is correlated with oxygen deficiency confinement oxide due to Si cover layer. A model based on first-principles quantum mechanical calculations shows significant decrease overall proton binding energy increasing strain interface. These support our generation interfaces large densities bonds.
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