Hydrogen model for radiation-induced interface states in SiO 2 -on-Si structures: a review of the evidence

摘要: A brief review is given of the evidence supporting “hydrogen model” interface trap generation in silicon-based MOS structures. Emphasis placed on importance electron spin resonance (ESR) identifying and quantifying certain crucial defect species, including atomic hydrogen, self-trapped holes, itself — theP b center. Three types experiments are considered: (1) low-temperature irradiation isochronal anneals, (2) pulse radiolysis at room temperature, (3) exposure previously-irradiated devices to hydrogen gas. These disparate data all reasonably accounted for by a unified model involving production H+ and/or H0 species oxide which subsequently drift where they react with hydrogen-passivated dangling bonds formP centers.