作者: Christof Metzmacher , Hans Peter Loebl , Robert Frederick Milsom
DOI:
关键词: Materials science 、 Optoelectronics 、 Substrate (electronics) 、 Dielectric layer 、 Piezoelectricity 、 Electrical engineering 、 Reflector (antenna) 、 Layer (electronics) 、 Resonator 、 Electrode
摘要: In order to provide a resonator structure (100) in particular bulk-acoustic-wave (BAW) resonator, such as film BAW (FBAR) or solidly-mounted (SBAR), comprising at least one substrate (10); reflector layer (20) applied deposited on the bottom electrode (30), electrode, (20); piezoelectric (40), C-axis normal layer, (30); top (50), (30) and/or (40) that is between and it proposed dielectric (63, 65) space region of non-overlap (50). The invention also concerned with method making its use.