Hexagonal Nano-Crystalline BCN Films Grown on Si (100) Substrate Studied by X-Ray Absorption Spectroscopy

作者: Md. Abdul Mannan , Yuji Baba , Norie Hirao , Tetsuya Kida , Masamitsu Nagano

DOI: 10.4236/MSA.2013.45A003

关键词: Resonance (chemistry)XANESMaterials scienceChemical bondAnalytical chemistryAbsorption (chemistry)CrystallographySubstrate (electronics)Chemical vapor depositionX-ray absorption spectroscopyX-ray photoelectron spectroscopy

摘要: Hexagonal nano-crystalline boron carbonitride (h-BCN) films grown on Si (100) substrate have been precisely investigated. The were synthesized by radio frequency plasma enhanced chemical vapor deposition using tris-dimethylamino borane as a single-source molecular precursor. was performed setting RF power at 400 - 800 W. reaction pressure 2.6 Pa and the temperature recorded 700°C 800°C. Formation of h-BCN compound has confirmed X-ray diffraction analysis. peaks 26.3° together with small unknown peak 29.2° elucidated due to formation an structure. composed B, C, N atoms different B-N, B-C, C-N bonds in forming sp2-BCN atomic configuration studied photoelectron spectroscopy. Orientation local structures hybrid near-edge absorption fine structure (NEXAFS) measurements. dominant presence p* s* resonance sp2-hybrid orbitals B K-edge NEXAFS spectra revealed around like-BN3 h-BN. orientation suggested basis polarization dependence spectra.

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