Single-step synthesis of crystalline h-BN quantum- and nanodots embedded in boron carbon nitride films

作者: Boitumelo J Matsoso , Kamalakannan Ranganathan , Bridget K Mutuma , Tsenolo Lerotholi , Glenn Jones

DOI: 10.1088/1361-6528/AA56DF

关键词: Band gapNanotechnologyCarbon nitrideNanodotQuantum dotAnalytical chemistryChemical vapor depositionNitrideBoronPotential wellMaterials science

摘要: Herein we report on the synthesis and characterization of novel crystalline hexagonal boron nitride (h-BN) quantum- nanodots embedded in large-area carbon (BCN) films. The films were grown a Cu substrate by an atmospheric pressure chemical vapour deposition technique. Methane, ammonia, boric acid used as precursors for C, N B to grow these few atomic layer thick uniform We observed that both size h-BN quantum/nanodots thickness BCN influenced vaporization temperature well H3BO3 (g) flux over substrate. These growth conditions easily achieved changing position solid reactor with respect Atomic force microscope (AFM) TEM analyses show variation dot distribution, ranging from (∼224 nm) quantum dots (∼11 B-source is placed further away foil. distance between foil gave increase C composition (42 at% C-65 C) decrease contents (18 14 8 7 N). UV-vis absorption spectra showed higher band gap energy (5.90 eV) comparison (5.68 due confinement effect. results indicated its reaction ammonia plays significant role controlling nucleation nanodots. are proposed be solar cells. A mechanism explain reported.

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