Atomic layer deposition growth of zirconium doped In2O3 films
作者： Timo Asikainen , Mikko Ritala , Markku Leskelä
DOI: 10.1016/S0040-6090(03)00822-8
关键词: Thin film 、 Chemistry 、 Crystallite 、 Doping 、 Mineralogy 、 Analytical chemistry 、 Zirconium 、 Atomic layer deposition 、 Oxide 、 Indium 、 Electrical measurements
摘要: Abstract Zirconium doped indium oxide thin films were deposited by the atomic layer deposition technique at 500 °C using InCl 3 , ZrCl 4 and water as precursors. The characterised X-ray diffraction, energy dispersive analysis optical electrical measurements. had polycrystalline In 2 O structure. High transparency resistivity of 3.7×10 −4 Ω cm obtained.
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